Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

FEATUREs
■ AEC Q101 compliant
■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
■ ESD gate-emitter protection
■ Gate-collector high voltage clamping
■ Logic level gate drive
■ Low saturation voltage
■ High pulsed current capability
■ Gate and gate-emitter resistor

APPLICATION
■ Pencil coil electronic ignition driver