Part Name
STFW4N150
Description
Other PDF
PDF
page
16 Pages
File Size
423.2 kB
MFG CO.
STMicroelectronics
STFW4N150 Datasheet - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH
Application
■ Switching applications
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