STFU15NM65N Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
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Part Name
Description
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N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a TO-220FP package
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N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package ( Rev : 2018 )
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N-channel 650 V, 0.230 Ω typ., 12 A MDmesh™ M5 Power MOSFET in a DPAK package ( Rev : 2018 )
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