Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH™ 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 650 V, 0.073 Ω, 30 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics