Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
FEATUREs
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs in TO‑220FP, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2012 )
STMicroelectronics
N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 950 V, 120 mΩ typ., 38 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH™ 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics