STF140N8F7 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 4.6 mΩ typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package ( Rev : 2016 )
STMicroelectronics