STF11N65K3 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This device is an N-channel Zener-protected SuperMESH3™ Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
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N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 ( Rev : 2010 )
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N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET
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N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET ( Rev : 2011 )
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N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET ( Rev : 2003 )
STMicroelectronics
N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics