Part Name
STD9NM40N
Other PDF
no available.
PDF
page
18 Pages
File Size
1 MB
MFG CO.
STMicroelectronics
STD9NM40N Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
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N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 550 V, 0.150 Ω typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages ( Rev : 2021 )
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N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
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N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages
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N-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET in DPAK ( Rev : 2011 )
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N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages
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