Part Name
STD7NM80-1
Other PDF
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24 Pages
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655.3 kB
MFG CO.
STMicroelectronics
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STD7NM80-1 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
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