Part Name
STD6NM60N-1
Description
Other PDF
PDF
page
19 Pages
File Size
688.8 kB
MFG CO.
STMicroelectronics
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STD6NM60N-1 Datasheet - STMicroelectronics
STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Part Name
Description
View
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N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
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N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
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N-channel 600 V - 0.37 Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET ( Rev : 2008 )
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