Part Name
STD5NM60T4
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MFG CO.
STMicroelectronics
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STD5NM60T4(2003) Datasheet - STMicroelectronics
STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
■ TYPICAL RDS(on) = 0.9Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allowing
system miniaturization and higher efficiencies.
Part Name
Description
View
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N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET ( Rev : 2006 )
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N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
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N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2002 )
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N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET
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