STD4NS25 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
■ TYPICAL RDS(on) = 0.9 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
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Part Name
Description
View
MFG CO.
N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
STMicroelectronics
N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET
STMicroelectronics
N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY™ MOSFET
STMicroelectronics
Nch 250V 4A Power MOSFET
ROHM Semiconductor
N-CHANNEL 250V - 0.38Ω - 8A D2PAK MESH OVERLAY™ MOSFET
STMicroelectronics
Nch 250V 4A Power MOSFET
ROHM Semiconductor
N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY™ MOSFET ( Rev : 2000 )
STMicroelectronics