Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics