Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.Features
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected
APPLICATION
■ Switching applications
Part Name
Description
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MFG CO.
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 525 V, 1.2 Ω typ., 4.4 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2014 )
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2015 )
STMicroelectronics
N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2018 )
STMicroelectronics