STD15N60DM6 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220 package
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N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220FP package
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N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
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N-channel 650 V, 0.230 Ω typ., 12 A MDmesh™ M5 Power MOSFET in a DPAK package ( Rev : 2018 )
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics