STB7NA40 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 0.82 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Part Name
Description
View
MFG CO.
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semiconductor
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ( Rev : 1996 )
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics