Part Name
STB7ANM60N
Other PDF
PDF
page
20 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
HOME >>> STMicroelectronics >>> STB7ANM60N PDF
STB7ANM60N(2013) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages
STMicroelectronics
N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK and DPAK packages
STMicroelectronics
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ M5 Power MOSFETs in D2PAK and DPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
Share Link: 