Part Name
STB25NM60N
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MFG CO.
STMicroelectronics
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STB25NM60N(2005) Datasheet - STMicroelectronics
STMicroelectronics
DESCRIPTION
The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
General Features
■ WORLD’S LOWEST ON RESISTANCE
■ TYPICAL RDS(on) = 0.140 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ II family is very suitable for
increase the power density of high voltage
converters allowing system miniaturization and higher
efficiencies.
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