Part Name
STB18N60DM2
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MFG CO.
STMicroelectronics
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STB18N60DM2 Datasheet - STMicroelectronics
STMicroelectronics
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package
STMicroelectronics
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package
STMicroelectronics
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