STB13NM60N Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
• FEATURES
• Drain Current –ID= 11A@ TC=25℃
• Drain Source Voltage-
: VDSS= 600V(Min)
• Static Drain-Source On-Resistance
: RDS(on) = 360mΩ (Max)
• 100% avalanche tested
• Low input capacitance and gate charge
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
• APPLICATIONS
• Switching applications
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