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STB12NM50-1(2005) Datasheet - STMicroelectronics

P12NM50FP image

Part Name
STB12NM50-1

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14 Pages

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388.2 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

General Features
■ TYPICAL RDS(on) = 0.30 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ LOW INPUT CAPACITANCE AND GATE
   CHARGE
■ 100% AVALANCHE TESTED
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
   MANUFACTURING YIELDS


APPLICATIONS
   The MDmesh™ family is very suitable for increasing 
   power density of high voltage converters allowing 
   system miniaturization and higher efficiencies.


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