PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE010 conform to JEDEC standard pinouts for byte-wide memories.

FEATURES:
• Single Voltage Read and Write Operations
   – 5.0V-only for SST29EE010
   – 3.0-3.6V for SST29LE010
   – 2.7-3.6V for SST29VE010
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   – Active Current: 20 mA (typical) for 5V and 10 mA
   (typical) for 3.0/2.7V
   – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
   – 128 Bytes per Page, 1024 Pages
   – Page-Write Cycle: 5 ms (typical)
   – Complete Memory Rewrite: 5 sec (typical)
   – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
   – 5.0V-only operation: 70 and 90 ns
   – 3.0-3.6V operation: 150 and 200 ns
   – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• End of Write Detection
   – Toggle Bit
   – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via Software Operation
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
   – 32-pin PDIP