SSP7492N Datasheet - Secos Corporation.
MFG CO.

Secos Corporation.
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
• Low RDS(on) provides higher efficiency and extends battery life.
• Low thermal impedance copper leadframe SOP-8PP saves board
space.
• Fast switching speed.
• High performance trench technology.
Part Name
Description
View
MFG CO.
8.3A, 150V, RDS(ON) 48 mΩ N-Channel Enhancement MOSFET
Secos Corporation.
3.6A, 150V, RDS(ON) 255 mΩ N-Channel Enhancement MOSFET
Secos Corporation.
N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255mΩ
Secos Corporation.
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
20A, 60V, RDS(ON) 8.2mΩ N-Channel Enhancement MOSFET
Secos Corporation.
15A, 60V, RDS(ON) 17mΩ N-Channel Enhancement MOSFET
Secos Corporation.
26A, 60V, RDS(ON) 4.9mΩ N-Channel Enhancement MOSFET
Secos Corporation.
90A , 100V , RDS(ON) 16mΩ N-Channel Enhancement Mode MOSFET
Secos Corporation.
35A, 30V, RDS(ON) 2.8 mΩ N-Channel Enhancement MOSFET
Secos Corporation.
34A, 40V, RDS(ON) 3 mΩ N-Channel Enhancement MOSFET
Secos Corporation.