SSM6N813R Datasheet - Toshiba
MFG CO.

Toshiba
Features
(1) AEC-Q101 qualified (Please see the orderable part number list)
(2) 175 °C MOSFET
(3) 4.5 V drive
(4) Low drain-source on-resistance
: RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)
APPLICATIONs
• Power Management Switches
Part Name
Description
View
MFG CO.
MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba