SSM6K405TU(2007) Datasheet - Toshiba
MFG CO.

Toshiba
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V)
Ron = 214 mΩ (max) (@VGS = 1.8V)
Ron = 164 mΩ (max) (@VGS = 2.5V)
Ron = 126 mΩ (max) (@VGS = 4.0V)
Part Name
Description
View
MFG CO.
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba