SSM3K333R Datasheet - Toshiba
MFG CO.

Toshiba
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 4.5V drive
• Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
: RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
Part Name
Description
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MFG CO.
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H) ( Rev : 2009 )
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