General Description
This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• 7.0 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 10 V
                      RDS(ON) = 0.050 Ω @ VGS = 4.5 V
• Low gate charge.
• Fast switching speed.
• High power and current handling capability.

APPLICATIONs
• Battery switch
• Load switch
• Motor controls