General Description
   This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V).

FEATUREs
• 4 A, 30 V. RDS(ON) = 35 mΩ @ VGS = 10 V
                   RDS(ON) = 50 mΩ @ VGS = 4.5 V
• Extended VGSS range (±20V) for battery applications
• Low gate charge
• High performance trench technology for extremely
   low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management