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SI3861BDV-T1-E3 Datasheet - Vishay Semiconductors

SI3861BDV image

Part Name
SI3861BDV-T1-E3

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page
6 Pages

File Size
115 kB

MFG CO.
Vishay
Vishay Semiconductors 

DESCRIPTION
The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3861DV operates on supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.


FEATURES
 4.5-V Rated
 ESD Protected: 3000 V
 105-mLow rDS(on)TrenchFET
 4.5 to 20-V Input
 1.5 to 8 -V Logic Level Control
 Low Profile, Small Footprint TSOP-6 Package
 3000-V ESD Protection On Input Switch, VON/OFF
 Adjustable Slew-Rate

Page Link's: 1  2  3  4  5  6 

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