Part Name
S30D45CE
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MFG CO.

Mospec Semiconductor
SchottkyBarrier Rectifiers
Using the SchottkyBarrier principle with a Molybdenum barrier metal.
These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.
*LowForward Voltage.
*LowSwitching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*LowPower Loss & High efficiency.
*150℃ Operating Junction Temperature
*LowStored Charge MajorityCarrier Conduction.
*Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O