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S25FL128P Datasheet - Cypress Semiconductor

S25FL128P image

Part Name
S25FL128P

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page
44 Pages

File Size
1.1 MB

MFG CO.
Cypress
Cypress Semiconductor 

General Description
   The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.

Distinctive Characteristics
Architectural Advantages
◾ Single power supply operation
   – Full voltage range: 2.7V to 3.6V read and program operations
◾ Memory Architecture
   – 128Mb uniform 256 KB sector product
   – 128Mb uniform 64 KB sector product
◾ Program
   – Page Program (up to 256 bytes) in 1.5 ms (typical)
   – Faster program time in Accelerated Programming mode
      (8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)
◾ Erase
   – 2 s typical 256 KB sector erase time
   – 0.5 s typical 64 KB sector erase time
   – 128 s typical bulk erase time
   – Sector erase (SE) command (D8h) for 256 KB sectors; (20h or
      D8h) for 64KB sectors
   – Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for
      64KB sectors
◾ Cycling Endurance
   – 100,000 cycles per sector typical
◾ Data Retention
   – 20 years typical
◾ Device ID
   – RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read
      manufacturer and device ID information
   – RES command one-byte electronic signature for backward
      compatibility
◾ Process Technology
   – Manufactured on 0.09 µm MirrorBit® process technology
◾ Package Option
   – Industry Standard Pinouts
   – 16-pin SO package (300 mils)
   – 8-Contact WSON Package (6 x 8 mm)


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