Part Name
S1AHE3G
Description
Other PDF
no available.
PDF
page
4 Pages
File Size
352.4 kB
MFG CO.
Taiwan Memory Technology
S1AHE3G Datasheet - Taiwan Memory Technology
Taiwan Memory Technology
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Part Name
Description
View
MFG CO.
1A, 50V - 1000V Silicon Rectifiers ( Rev : V_F15 )
Shenzhen Luguang Electronic Technology Co., Ltd
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