S-LBAT30LT1G Datasheet - Leshan Radio Company,Ltd
MFG CO.

Leshan Radio Company,Ltd
● Features
Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
● Construction
Silicon epitaxial planar
● We declare that the material of product
compliance with RoHS requirements.
Part Name
Description
View
MFG CO.
SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE
Toshiba
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2010 )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2011 )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevB )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevC )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2009 )
ROHM Semiconductor