ABSTRACT
NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.3 to 1.4 GHz frequency range. Recommended for radar applications. Diffused emitter ballasting resistorts capable of withstanding a high VSWR and provides excellent current sharing.

FEATURES
◾ Interdigitated structure
◾ Diffused emitter
   ballasting resistors
◾ Gold metallization
◾ Multicell geometry