Part Name
RTH20007-10
Description
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PDF
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RFHIC
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RTH20007-10 Datasheet - RFHIC
RFHIC
Description
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH20007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 1930MHz to 1990MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• Asymmetric Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
• 4G/ LTE system
• Small cell
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