RTAN230X Datasheet - Isahaya Electronics
MFG CO.

Isahaya Electronics
FEATURE
◾ Built-in bias resistor(R1=2.2kΩ)
◾ Small package for easy mounting.
◾ High reverse hFE
◾ Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA)
◾ Low on Resistance
Ron=0.70Ω(TYP.)(@VI=5V)
APPLICATION
muting circuit , switching circuit
Part Name
Description
View
MFG CO.
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon Npn Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics