RJK6025DPE-00J3 Datasheet - Renesas Electronics
MFG CO.
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
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Part Name
Description
View
MFG CO.
600V - 5A - MOS FET High Speed Power Switching
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600V - 1A - MOS FET High Speed Power Switching
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600V - 2A - MOS FET High Speed Power Switching
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600V - 0.4A - MOS FET High Speed Power Switching
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600V - 11A - MOS FET High Speed Power Switching
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600V - 11A - MOS FET High Speed Power Switching
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600V - 21A - MOS FET High Speed Power Switching
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600V - 10A - MOS FET High Speed Power Switching
Renesas Electronics
