The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

FEATUREs
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175°C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction

APPLICATIONs
• Switching Power Supplies
• Power Switching Circuits
• General Purpose