Part Name
RHFAHC00K01V
Description
Other PDF
no available.
PDF
page
15 Pages
File Size
623.2 kB
MFG CO.
STMicroelectronics
HOME >>> STMicroelectronics >>> RHFAHC00K01V PDF
RHFAHC00K01V Datasheet - STMicroelectronics
STMicroelectronics
Description
The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).
It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the needs of space applications. It can work from -55 °C to +125 °C ambient temperature.
Features
• 1.8 V to 3.3 V nominal supply
• 3.6 V max. operating
• 4.8 V AMR
• Very high speed: propagation delay of 3 ns maximum guaranteed
• Pure CMOS process
• CMOS output
• Ultra low power
• 300 krad TID targeted
• 125 MeV.cm2/mg SEL free
• 62.5 MeV.cm2/mg SET free
Applications
• Oscillators in space applications
• FPGA
• Microcontrollers
Share Link: 