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RFPA0133 Datasheet - RF Micro Devices

RFPA0133 image

Part Name
RFPA0133

Other PDF
  2012  

PDF
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page
8 Pages

File Size
710.2 kB

MFG CO.
RFMD
RF Micro Devices 

Product Description
   The RFPA0133 is a 3 V to 5 V high efficiency programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device has been designed to offer saturated efficiency greater than 60% over a range of frequencies from 380 MHz to 960 MHz.


FEATUREs
◾ 0.5 W CW Output Power at 3.6 V
◾ 1 W CW Output Power at 5 V
◾ 32 dB Small Signal Gain at 900 MHz
◾ >60% Efficiency @ PSAT
◾ Digitally Controlled Output Power
◾ 380 MHz to 960 MHz Frequency Range
◾ High Isolation


APPLICATIONs
◾ Analog Communication Systems
◾ 900 MHz Spread Spectrum Systems
◾ 400 MHz Industrial Radios
◾ Driver Stage for Higher Power Applications
◾ 3 V to 5 V Applications
◾ High Isolation Buffer


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