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RF5263 Datasheet - RF Micro Devices

RF5263 image

Part Name
RF5263

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page
2 Pages

File Size
93 kB

MFG CO.
RFMD
RF Micro Devices 

Product Description
The RF5263 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11g/n access point transmitters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a backside ground. The RF5263 is designed to maintain linearity over a wide range of supply voltages and power outputs.


FEATUREs
◾ Single 3.3V or 5.0V Power Supply
◾ 34dB Small Signal Gain (typ.)
◾ <2% EVM (RMS) 54Mbps @
   +26dBm
◾ Separate Power Detect/Power
   Down Pins
◾ Multiple Frequency Ranges


APPLICATIONs
◾ 802.11b/g/n Access Points
◾ PCS Communication Systems
◾ 2.4GHz ISM Band Applications
◾ Commercial and Consumer Systems
◾ WiBro 2.3GHz to 2.4GHz Band
   Applications
◾ WiMAX 2.5GHz to 2.7GHz Band
   Applications


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