Part Name
RD30HVF1
PDF
page
8 Pages
File Size
358.7 kB
MFG CO.

MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.