RD06HVF1(2008) Datasheet - MITSUBISHI ELECTRIC
MFG CO.

MITSUBISHI ELECTRIC
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
Part Name
Description
View
MFG CO.
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
MITSUBISHI ELECTRIC