Part Name
QS5U26TR
Description
Other PDF
no available.
PDF
page
6 Pages
File Size
65.7 kB
MFG CO.

ROHM Semiconductor
Features
1) The QS5U26 combines Pch MOSFET with
a Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
APPLICATIONs
Switching