
Infineon Technologies
The HYM 362140S/GS-60/-70 is a 8 M Byte DRAM module organized as 2 097 152 words by 36-bit in a 72-pin single-in-line package comprising eight HYB 511000BJ 1M × 1 DRAMs and sixteen HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC board.
Advanced Information
• 2 097 152 words by 36-bit organization (alternative 4 194 304 words by 18-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6952 mW active (-60 version)
max. 6292 mW active (-70 version)
CMOS – 132 mW standby
TTL – 264 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 12 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module with 31.75 mm height
• Utilizes eight 1M × 1-DRAMs and sixteen 1M × 4 DRAMs in 300 mil SOJ-packages
• 1024 refresh cycles / 16 ms
• Tin-Lead contact pads (S - version)
• God contact pads (GS - version)