Q62702P5053(2007) Datasheet - OSRAM GmbH
MFG CO.

OSRAM GmbH
Features
• Fabricated in a liquid phase epitaxy process
• Cathode is electrically connected to the case
• High reliability
• Matches all Si-Photodetectors
• Hermetically sealed package
APPLICATIONs
• Photointerrupters
• IR remote control
• Sensor technology
• Light curtains
Page Link's:
1
2
3
4
5
6
7
Part Name
Description
View
MFG CO.
GaAlAs Light Emitting Diode (660 nm)
Infineon Technologies
GaAlAs Light Emitting Diode (660 nm)
Siemens AG
GaAlAs Light Emitting Diode (660 nm)
Siemens AG
GaAlAs Light Emitting Diode (660 nm)
Infineon Technologies
GaAlAs Light Emitting Diode (660 nm)
OSRAM GmbH
Light Emitting Diode(GaAlAs)
Kodenshi Auk Co., LTD
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Red Light Emitting Diode
Panasonic Corporation