PTFB213004FV2R0 Datasheet - Infineon Technologies
MFG CO.

Infineon Technologies
Description
The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.
FEATUREs
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at
2170 MHz, 30 V
- POUT = 49.5 dBm Avg
- Gain = 17.5 dB
- Efficiency = 30%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
• Excellent thermal stability
• Integrated ESD protection
• Pb-free and RoHS-compliant
Part Name
Description
View
MFG CO.
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree, Inc
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz ( Rev : 2003 )
Infineon Technologies
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Infineon Technologies
RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V
Tyco Electronics
RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V
Tyco Electronics