Small Signal Transistor
NPN - RF Transistor Chip

PROCESS DETAILS

  Process                                EPITAXIAL PLANAR
  Die Size                               14.5 x 14.5 MILS
  Die Thickness                       7.1 MILS
  Base Bonding Pad Area         2.4 x 2.2 MILS
  Emitter Bonding Pad Area      2.4 x 2.2 MILS
  Top Side Metalization            Al - 30,000Å
  Back Side Metalization           Au - 18,000Å