General description
   P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• 3 kV ESD protected
• Trench MOSFET technology
• Low threshold voltage

APPLICATIONs
• Relay driver
• High-side loadswitch
• Switching circuits