PMBTA44-1 Datasheet - NXP Semiconductors.
MFG CO.

NXP Semiconductors.
General description
PN high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a OT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
Features
Low current (max. 300 mA)
High voltage (max. 400 V)
AEC-Q101 qualified
Applications
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
Part Name
Description
View
MFG CO.
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.